transistor (npn) features z low v ce(sat) .v ce(sat) =0.16v(typ.)(i c /i b =2a/0.2a) z complements to 2sb1188 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 32 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a p c collector dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 32 v emitter-base breakdown voltage v (br)ebo i e =50 a, i c =0 5 v collector cut-off current i cbo v cb =20v, i e =0 1 a emitter cut-off current i ebo v eb =4v, i c =0 1 a dc current gain h fe(1) v ce =3v, i c =500ma 82 390 collector-emitter saturation voltage v ce(sat) i c =2a, i b =0.2a 0.8 v transition frequency f t v ce =5v, i c =50ma, f=100mhz 100 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 30 pf classification of h fe(1) rank p q r range 82-180 120-270 180-390 marking dbp dbq dbr sot-89 1. base 2. collector 3. emitter 1 2 3 2SD1766 1 www.htsemi.com semiconductor jinyu
2 www.htsemi.com semiconductor jinyu 2SD1766
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